Nanoionic memory: Vive la resistance

DDRAM computer memoryFor some time now, conventional computer memory has been heading toward a crunch—a physical limit of how much storage can be crammed into a space before it is overwhelmed by heat and power problems. Generally, researchers have tried to avert this heat death in two ways: leapfrogging to the next generation of memory or refining current memory.

Researchers at Arizona State University’s Center for Applied Nanoionics (CANi) have combined the two approaches to create new memory that amps up performance while remaining compatible with today’s devices. CANi also used nanoionics (a technique for moving tiny bits of matter around on a chip) to overcome the limitations of conventional electronics: Instead of moving electrons among ions, nanoionics moves the ions themselves.

Nanoionics may boost memory in consumer electronics

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